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Due to the optimum design of their components-access transistor, storage capacitor, and peripherals-DRAMs are the cheapest and densest semiconductor memory currently available. As a result, most of DRAM structure research and development focuses on the technology used for its constituent components and their interconnections. However, only a few books are available on semiconductor memories in general and fewer on DRAMs.Dynamic RAM: Technology Advancementsprovides a holistic view of the DRAM technology with a systematic description of the advancements in the field since the 1970s, and an analysis of future challenges.Topics Include:DRAM cells of all types, including planar, three-dimensional (3-D) trench or stacked, COB or CUB, vertical, and mechanically robust cells using advanced transistors and storage capacitorsAdvancements in transistor technology for the RCAT, SCAT, FinFET, BT FinFET, Saddle and advanced recess type, and storage capacitor realizationsHow sub 100 nm trench DRAM technologies and sub 50 nm stacked DRAM technologies and related topics may lead to new researchVarious types of leakages and power consumption reduction methods in active and sleep modeVarious types of SAs and yield enhancement techniques employing ECC and redundancyA worthwhile addition to semiconductor memory research, academicians and researchers interested in the design and optimization of high-density and cost-efficient DRAMs may also find it useful as part of a graduate-level course.
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