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Recently, research on the wide bandgap semiconductors such as GaN and AlxGa1-xN became very popular for their applications on various devices
Therefore comprehensive and systematic luminescence studies of Si implanted AlxGa1-xN, Mg doped GaN, and Si N implanted GaN grown on sapphire substrates by molecular beam epitaxial method have been made as a function of ion dose and anneal temperature. The ions were implanted at 200 keV with doses ranging from 1x10 13 to 1x10 15 cm -2 at room temperature. The samples were proximity cap annealed from 1200 to 1350 degrees C with a 500 Å thick AlN cap in a nitrogen environment. It has been found that the optical activation and implantation damage recovery are highly dependent upon ion dose and anneal temperature. The results of luminescence measurements on AlxGa1-xN made at 5 K by both photoluminescence and cathodoluminescence show that nearly complete implantation damage recovery can only be obtained after annealing at 1350 degrees C. The Si N implanted GaN showed only a small amount of optical activation in the cathodoluminescence measurements at 1250 to 1350 degrees C. Mg doped GaN results indicated that optical activation of the Mg ions was not prevalent, and ion implantation damage might not have been removed completely at 1350 degrees C. The results also indicate that current AlN cap protected the implanted AlxGa1-xN layer very well during high temperature annealing without creating any significant annealing damage. These luminescence observations are consistent with the results of electrical activation studies made on these samples.
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