SAMSUNG 850 EVO 2.5" 2TB SATA III 3D NAND Internal Solid State Drive (SSD) MZ-75E2T0B/AM Max Sequential Read: Up to 540 MBps Max Sequential Write: Up to 520 MBps 4KB Random Read: Up to 98,000 IOPS Controller: MHX 4KB Random Write: Up to 90,000 IOPS Used For: Consumer MTBF: 2,000,000 hours Operating Temperature: 0°C ~ 70°C
As the next generation beyond the bestselling 840 EVO, you'll get the 850 EVO's new 3 dimensional chip design that enables superior performance, greater reliability and superior energy efficiency so you can work and play faster and longer than ever before. br br b 3D V NAND Technology b p Samsung's innovative 3D V NAND flash memory architecture breaks through density, performance, and endurance limitations of today's conventional planar NAND architecture. Samsung 3D V NAND stacks 32 cell layers vertically resulting in higher density and better performance utilizing a smaller footprint. br br b Incredible Read Write Speeds b br br Achieve incredible read write performance to maximize your everyday computing experience with Samsung's TurboWrite technology. You can obtain up to 1.9x faster performance than the award winning Samsung 840 EVO. The 850 EVO delivers class leading performance in sequential read 540MB s and write 520MB s speeds. Plus, gain optimized random performance in all QD for better real world performance. br br b Enhanced RAPID mode b br br Samsung's Magician software enables RAPID Mode for up to 2x faster performance by utilizing unused PC memory DRAM as a high speed cache. The newest version of Samsung Magician supports up to a 4 GB cache on a system with 16 GB of DRAM. br br b Guaranteed Endurance and reliability b br br The 850 EVO doubles the endurance and reliability compared to the previous generation 840 EVO and features a class leading 5 year limited warranty. With enhanced long term reliability, the 850 EVO assures longterm dependable performance of up to 30 longer than the previous generation 840 EVO. p
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