The book gives a strong foundation on the physics and operation of FinFET, details aspects of the BSIM-CMG model such as surface potential, charge and current calculations, and includes a dedicated chapter on parameter extraction procedures, providing a st..
• Describes FD/SOI MOSFETs and 3-D FinFETs in detail • Covers short-channel effects, quantum-mechanical effects, applications of UTB devices to floating-body DRAM and conventional SRAM • Provides design criteria for nanoscale FinFET and nanoscale thi..
* describes FD/SOI MOSFETs and 3-D FinFETs in detail * covers short-channel effects, quantum-mechanical effects, applications of UTB devices to floating-body DRAM and conventional SRAM--
Due to the optimum design of their components—access transistor, storage capacitor, and peripherals—DRAMs are the cheapest and densest semiconductor memory currently available. As a result, most of DRAM structure research and development focuses on the..
Continuing from volume 1, this volume outlines circuit- and system-level design approaches and issues for these devices.Topics covered include self-healing analog/RF circuits; on-chip gate delay variability measurement in scaled technology; FinFET SRAM cir..
Due to the optimum design of their components-access transistor, storage capacitor, and peripherals-DRAMs are the cheapest and densest semiconductor memory currently available. As a result, most of DRAM structure research and development focuses on the tec..
This text covers basic semiconductor physics, and presents the advanced industry standard models for BJTs, MOSFETs, and FinFETs along with the statistical MOS models. The book is intended for senior undergraduate and graduate courses in electrical and elec..
